A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. 52.1 (a). A zener diode when reverse biased can either undergo avalanche break down or zener break down. 52.1 (b), arrow-head indicates the conventional direction of current flow P-N Junction Diode (a) Construction It is a two-terminal device consisting of a P-N junction formed either in Ge or Si crystal. For All Subject Study Materials – Click Here. The Use of PN Junction as Diode: The action of the P-N junction is similar to that of a vacuum diode. A diode consists of a single pn junction, Figure 68 . The pn junction is an interface between a p-type and an n-type region and is used to construct diodes and transistors. 52.1. The real diode: genération ‐recombinaison mechanismin depletionlayer 21 n p n pn n r i i 2 1 2 We know that If we suppose npconstant in depleted regionand np>> (in forward bias) , the rate rismax when n=p, and itcan be rewritten ( ) ( ) ( ) ( ) 2 exp() kT eVa p W N n W N p W P n W P n i 2 n i kT n eV r i a 2 PN Junction diode. A very thin layer of p-type semiconductor is grown on a relatively thicker n-type semiconductor. Figure 68: Diode pn junction. Forward biasing a PN Junction diode . 3.0.APPARATUS The following apparatus were used in the experiment: 1) Resistor: 10k-20k. A. Avalanche break down:-If both p-side and n-side of the diode are lightly doped, depletion region at the junction widens. We provide few finer electrodes on the top of the p-type semiconductor layer. 3 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.4 Deviations from the ideal Diode 3.4.1 Influence of Generation Image Source Forward biasing a pn junction diode is very simple. PN junction diode – Study Material. If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig P region has a high concentration of holes and N region contains a large number of electrons. Diode is a basic element in electronic and digital circuit. You just need to take a battery whose values can be varied from (o to V volts), connect its positive terminal to the p-side of pn junction diode and then connect the negative terminal of battery to the n-side of the pn junction diode. It allows the flow of electric current through it when it is forward biased and does not allow the current to flow through it when it is reverse biased. Silicon wafer cleaning (RCA process) In the IC processing wafers it is necessary to maintain the purity and perfection of material. Construction of Solar Cell Although this is basically a junction diode, but constructionally it is littlebit different form conventyional p-n junction diode. Its circuit symbol is shown in Fig. The P-and N-type regions are referred to as anode and cathode respectively. p- n diode applications: Photodetectors P-n junction can detect light when reverse biased p-type n-type When the light illuminates the p-n junction, the photons energy RELEASES free electrons and holes. They are referred to as PHOTO-ELECTRONS and PHOTO-HOLES The applied voltage separates the photo-carriers attracting electrons toward A zener diode when forward biased behaves like an ordinary P-N junction diode. Thus p-n junction allows electric current to flow in one direction only. In this paper formation a PN junction diode is explained by VLSI fabrication steps which are stated below. 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